Series Outline
The GFC combines Pivotal’s patented, high accuracy GFM™ system with patented control valve technology. As such, it leapfrogs the current MFC technology by offering an order of magnitude improvement on key flow metrics, thereby enabling advanced wafer-manufacturing processes.
SERIES FEATURES
Widest Flow Range with Accuracy (Actual Gas):
0.5 - 100% Full Scale
Best Flow Accuracy:
±0.5% of Setpoint for 0.5 - 100% Full Scale
Fastest Settling Time for Turn-On and Turndown
Effect of Pressure and Temperature:
Invariant
Automated In Situ Calibration:
NIST Traceable
Innovative Control Technology:
Robust Design, No Orifice
BENEFITS
High-temp electronics and piezo valve allows gas/ambient temperature up to 70 ℃
Excellent for low vapor pressure gases and corrosive gases that need heated gas distribution system
Fastest Settling Time for Turn-On and Turndown:
3100ms: 00ms:0.5 100% Full
Scale % -10% Full Scale
Fastest Settling Time for Turn-On and Turndown:
≤300ms 10% - 100% F.S.
Automated In Situ Calibration
NIST Traceable
Innovative Control Technology:
Robust Design, No Orifice
Applications
Excellent for low vapor pressure gases and corrosive gases that require heated gas and ambient temprature.
Series Specifications
Performance
Flow range
0.1 - 2000 sccm (4 part numbers to cover this range)
Flow Accuracy
±0.5% of Setpoint for actual gas:
0.1 - 20 sccm (GFC20) 1 - 200 sccm (GFC200)
5 - 1000 sccm (GFC1000), 10 - 2000 sccm (GFC2000)
Settling Time
10% - 100% FS ≤ 100 ms, 0.5% - 10% FS ≤ 300 ms*
Leak Integrity
< 1E-9 atm.cc/sec (He)
Leak By Rate
0.01 sccm (GFC20), 0.1 sccm (GFC200),
0.5 sccm (GFC1000), 1.0 sccm (GFC2000)
Repeatability
±0.2% of setpoint for 0.5%-100% FS
Operating Conditions
Supply Pressure
Standard: 100 - 300kPaG (14.5 - 43.5 psig)
Low pressure gases C4H9F, SiH2Cl2, C3H1OSI, BCl3, C4F6, C4F6-q, C4F8, C5F8, SiCIA and WF6 the inlet pressure range can be as low as -81 kPaG (-11.7 psig) Refer to the Gas Bin Table on page 5 Et 6 for the specific ranges.
Low pressure gases C4H9F, SiH2Cl2, C3H1OSI, BCl3, C4F6, C4F6-q, C4F8, C5F8, SiCIA and WF6 the inlet pressure range can be as low as -81 kPaG (-11.7 psig) Refer to the Gas Bin Table on page 5 Et 6 for the specific ranges.
Downstream Pressure
Vacuum to 53 kPa (0 - 400 Torr)
Proof Pressure
2.07 MPaG (300 psig)
Design Pressure
(Burst Pressure)
2.65 MPaG (385 psig)
Operating Temperature
Standard: 15-60°C, High Temperature: 15-70°C
Materials
Wetted Surface
316 SS per Semi F20
Surface Finish
5 pin average Ra
Seals
Metal (PCTFE - Optional)
Electrical
EtherCAT
24 VDC
DeviceNet
11 - 24 VDC, 5 W
Analog and RS-485
±15 VDC, 150 mA
In-Rush Current
<200 mA
APPLICATION
Critical Etch
CVD / Deposition
Critical Low Flow
Atomic Layer Etch
