Series Outline
The GFC combines Pivotal’s patented, high accuracy GFM™ system with patented control valve technology. As such, it leapfrogs the current MFC technology by offering an order of magnitude improvement on key flow metrics, thereby enabling advanced wafer-manufacturing processes.
SERIES FEATURES
Most Accurate Flow Control at Low Flow Rate:
± 0.5% SP for 0.025 sccm ~ 5.0 sccm.
Fastest Settling Time for Turn-On and Turndown:
10% - 100% FS ≦ 100ms; 0.5% -10% FS ≦ 300ms
Effect of Pressure and Temperature:
Invariant
Automated In Situ Calibration:
NIST Traceable
Automated In Situ Calibration
NIST Traceable
Innovative Control Technology:
Robust Design, No Orifice
BENEFITS
There are more and more demand for accurate flow control at very low flow rate
GFC5 proved unsurpassed high flow accuracy at very low flow rate
Fastest Settling Time for Turn-On and Turndown:
3100ms: 00ms:0.5 100% Full
Scale % -10% Full Scale
Fastest Settling Time for Turn-On and Turndown:
≤300ms 10% - 100% F.S.
Automated In Situ Calibration
NIST Traceable
Innovative Control Technology:
Robust Design, No Orifice
Applications
Superior in highly accurate flow control at very low flow rate. Customers reported that very low additive to etching process improves process results drastically.
Series Specifications
Performance
Flow range
0.1 - 2000 sccm (4 part numbers to cover this range)
Flow Accuracy
±0.5% of Setpoint for actual gas:
0.1 - 20 sccm (GFC20) 1 - 200 sccm (GFC200)
5 - 1000 sccm (GFC1000), 10 - 2000 sccm (GFC2000)
Settling Time
10% - 100% FS ≤ 100 ms, 0.5% - 10% FS ≤ 300 ms*
Leak Integrity
< 1E-9 atm.cc/sec (He)
Leak By Rate
0.01 sccm (GFC20), 0.1 sccm (GFC200),
0.5 sccm (GFC1000), 1.0 sccm (GFC2000)
Repeatability
±0.2% of setpoint for 0.5%-100% FS
Operating Conditions
Supply Pressure
Standard: 100 - 300kPaG (14.5 - 43.5 psig)
Low pressure gases C4H9F, SiH2Cl2, C3H1OSI, BCl3, C4F6, C4F6-q, C4F8, C5F8, SiCIA and WF6 the inlet pressure range can be as low as -81 kPaG (-11.7 psig) Refer to the Gas Bin Table on page 5 Et 6 for the specific ranges.
Low pressure gases C4H9F, SiH2Cl2, C3H1OSI, BCl3, C4F6, C4F6-q, C4F8, C5F8, SiCIA and WF6 the inlet pressure range can be as low as -81 kPaG (-11.7 psig) Refer to the Gas Bin Table on page 5 Et 6 for the specific ranges.
Downstream Pressure
Vacuum to 53 kPa (0 - 400 Torr)
Proof Pressure
2.07 MPaG (300 psig)
Design Pressure
(Burst Pressure)
2.65 MPaG (385 psig)
Operating Temperature
Standard: 15-60°C, High Temperature: 15-70°C
Materials
Wetted Surface
316 SS per Semi F20
Surface Finish
5 pin average Ra
Seals
Metal (PCTFE - Optional)
Electrical
EtherCAT
24 VDC
DeviceNet
11 - 24 VDC, 5 W
Analog and RS-485
±15 VDC, 150 mA
In-Rush Current
<200 mA
APPLICATION
Critical Etch
CVD / Deposition
Critical Low Flow
Atomic Layer Etch
