GFC-X Series
The GFC X, the latest generation in Pivotal Systems’ high-flow product line, features a pressure-based flow controller with a position control valve, allowing for precise control. We offer one of the industry’s widest ranges of accuracy, making it ideal for various applications, including deposition processes. The GFC X paves the way for the future of gas flow control by offering an order of magnitude improvement on key flow metrics and enabling advanced wafer-manufacturing processes. In addition, the GFC X offers a range of accuracy from 5% to 100% of full scale, surpassing many competitors.
SERIES FEATURES
Innovative Position Control Technology
Wide Flow Range:
500 sccm-50,000 sccm
Flow accuracy:
±1.0% of Setpoint for 5% -100% Full Scale
Fastest Settling Time for Turn-On and Turndown:
≤150ms 5% - 100% F.S.
Machine Learning
Valve Position Updated
Open flow path with no small orifices or capillary tubes
BENEFITS
Unaffected by variations in pressure
works with downstream pressures from vacuum to atmospheric
Exceptional corrosive gas performance
Advanced flow monitoring & self diagnosis
Fastest Settling Time for Turn-On and Turndown:
≤150ms 5% - 100% F.S.
Automated In Situ Calibration
NIST Traceable
Innovative Control Technology:
Robust Design, No Orifice
Applications
Excellent flow accuracy, wide flow range, and fast settlign time for higher flow. Downstream position control valve ensures fast step down.
Series Specifications
Performance
Flow range
0.1 - 2000 sccm (4 part numbers to cover this range)
Flow Accuracy
±0.5% of Setpoint for actual gas:
0.1 - 20 sccm (GFC20) 1 - 200 sccm (GFC200)
5 - 1000 sccm (GFC1000), 10 - 2000 sccm (GFC2000)
Settling Time
10% - 100% FS ≤ 100 ms, 0.5% - 10% FS ≤ 300 ms*
Leak Integrity
< 1E-9 atm.cc/sec (He)
Leak By Rate
0.01 sccm (GFC20), 0.1 sccm (GFC200),
0.5 sccm (GFC1000), 1.0 sccm (GFC2000)
Repeatability
±0.2% of setpoint for 0.5%-100% FS
Operating Conditions
Supply Pressure
Standard: 100 - 300kPaG (14.5 - 43.5 psig)
Low pressure gases C4H9F, SiH2Cl2, C3H1OSI, BCl3, C4F6, C4F6-q, C4F8, C5F8, SiCIA and WF6 the inlet pressure range can be as low as -81 kPaG (-11.7 psig) Refer to the Gas Bin Table on page 5 Et 6 for the specific ranges.
Low pressure gases C4H9F, SiH2Cl2, C3H1OSI, BCl3, C4F6, C4F6-q, C4F8, C5F8, SiCIA and WF6 the inlet pressure range can be as low as -81 kPaG (-11.7 psig) Refer to the Gas Bin Table on page 5 Et 6 for the specific ranges.
Downstream Pressure
Vacuum to 53 kPa (0 - 400 Torr)
Proof Pressure
2.07 MPaG (300 psig)
Design Pressure
(Burst Pressure)
2.65 MPaG (385 psig)
Operating Temperature
Standard: 15-60°C, High Temperature: 15-70°C
Materials
Wetted Surface
316 SS per Semi F20
Surface Finish
5 pin average Ra
Seals
Metal (PCTFE - Optional)
Electrical
EtherCAT
24 VDC
DeviceNet
11 - 24 VDC, 5 W
Analog and RS-485
±15 VDC, 150 mA
In-Rush Current
<200 mA
APPLICATIONS
Critical Etch
Deposition- CVD & PVD
Critical Low Flow
Atomic Layer Etch
